Many companies have intensively publicized Micro LED patents to lead the industry's technological in

Recently, important companies in the industries such as Zhaochi Semiconductor, Gaoke Huaye, and Gaoke Video have announced Micro LED-related patents. The MiP, chips, epitaxial wafers and other technologies they cover have attracted widespread attention in the field of Micro LED.
Zhaochi Semiconductor: Three Micro LED patents are moving towards authorization
Zhaochi Semiconductor has made remarkable achievements in the research and development of Micro LED technology. Recently, three Micro LED patents have successfully entered the effective authorization stage. These patents mainly focus on the fields of Micro LED epitaxial wafers and chip manufacturing.
Epitaxial wafer patent that improves low-current light efficiency
On April 1, a patent titled microled epitaxial wafer and its preparation method, and MicroLED chip entered the effective authorization stage."" The invention belongs to the field of optoelectronic technology, and the disclosed Micro LED epitaxial wafer has a unique structure. It comprises a substrate on which a buffer layer, an N-type GaN layer, a multi-quantum well layer, and a P-type GaN layer are sequentially arranged. Wherein, the first multiple quantum well layer consists of at least one set of a first InGaN quantum well layer, a first AlGaN/GaN superlattice layer and a first GaN quantum barrier layer stacked in sequence; the second multiple quantum well layer consists of at least one set of a second InGaN quantum well layer, a second AlGaN/GaN superlattice layer and a second GaN quantum barrier layer stacked in sequence; and the third multiple quantum well layer consists of at least one set of a third InGaN quantum well layer, a hole injection layer and a third GaN quantum barrier layer stacked in sequence. With this design, this Micro LED epitaxial wafer can significantly improve the light efficiency of Micro LED chips under low operating current densities, providing strong technical support for related products in energy-saving and efficient operation.
Two patents to improve luminous efficiency

As early as March 18, the two patents of Micro-LED epitaxial wafer and its preparation method, Micro-LED and high-efficiency Micro-LED epitaxial wafer and its preparation method, and Micro-LED have entered the effective authorization stage. The common feature is that they can improve luminous efficiency.""""
Among them, the Micro-LED epitaxial wafer and its preparation method, and the Micro-LED epitaxial wafer structure under the Micro-LED patent are sequentially a substrate, an N-type GaN layer, a first multiple quantum well layer and a P-type GaN layer. The first multiple quantum well layer consists of alternately stacked quantum well layers and first quantum barrier layers."" The quantum well layer specifically includes a first GaN layer, a first InGaN layer, an InxGa1-xN layer and an AlN layer stacked in this order; the first quantum barrier layer consists of a first AlGaN layer, an N-type AlGa1-N layer, an undoped AlaGa1-aN layer, an N-type AlGa1-N layer and a second GaN layer stacked in this order.ααββ In this structure, the proportion of In composition in the first InGaN layer changes gradually and has a maximum value x; the proportion of Al composition in the first AlGaN layer changes gradually and has a minimum value.≤≥α
The high-efficiency Micro-LED epitaxial wafer and its preparation method, and the Micro-LED epitaxial wafer structure in the Micro-LED patent are in order substrate, buffer layer, undoped GaN layer, N-type GaN layer, multi-quantum well layer, hole expansion layer, hole storage layer and hole layer."" The hole expansion layer has a periodic structure, and each cycle includes a BN layer and a lightly Mg-doped GaN layer stacked in sequence; the hole storage layer is also a periodic structure, and a GaN layer, an InGaN layer and an Mg-doped AlGaN layer are stacked in sequence each cycle; The hole layer is also a periodic structure, with a P-type BInGaN layer, an Mg3N2 layer and a P-type GaN layer stacked in sequence each cycle, and the doping concentration of the P-type GaN layer is 11019 cm-3.≥× These carefully designed structures provide an innovative path for improving the luminous efficiency of Micro-LEDs.
Gaoke Huaye: Announces a new method for fabricating Micro MIP devices
On March 28, a patent filed by Shanxi Gaoke Huaye Electronics Group Co., Ltd. on a preparation method for quantum dot Micro MIP devices entered the authorization stage."" This patent belongs to the field of semiconductor display technology, and its preparation method includes multiple key steps:

1. S1. Prepare raw materials: Lay the foundation for the subsequent preparation process and ensure accurate selection of materials.​

2. S2. Sapphire coating: Special coating treatment is carried out on sapphire to prepare for subsequent processes.​

3. S3. Mass transfer: Use advanced mass transfer technology to efficiently realize chip transfer.​

4. S4. Quantum dot slot: Build a quantum dot slot to provide suitable space for the placement of quantum dots.​

5. S5. Quantum dot spraying: Accurately spray the quantum dots to the corresponding positions.​

6. S6, quantum dot packaging: quantum dots are encapsulated to ensure stable performance.​

7. S7. Laser lift-off: Use laser lift-off technology to accurately handle the chip packaging process.​

8. S8, RDL packaging: Carry out RDL packaging to further improve the device packaging process.​

9. S9. Device cutting: Cut the device to meet the application size requirements.​

10. S10. Device sub-test: Conduct sub-test on the prepared devices to ensure product quality.​

The invention combines blue light Micro COW with quantum dot materials to successfully realize color conversion and generate red light and green light, which greatly improves the color saturation and delicacy of the display device, and significantly improves the overall display quality. At the same time, the application of massive transfer technology and laser lift-off technology makes the chip transfer and packaging process more efficient and accurate, effectively reduces losses in the manufacturing process, and helps control manufacturing costs. In addition, optimized device cutting and packaging processes ensure device performance and quality while also improving production efficiency.
High-tech Video: Launched full-color Micro LED device patent

On March 11, Shanxi High-Tech Video Technology Co., Ltd.'s invention patent for the preparation method of a monolithically integrated common cathode full-color MicroLED device entered the substantive review stage."" The invention belongs to the technical field of Micro LED displays, and its unique preparation process is as follows: first, spraying graphene quantum dots on the surface of a Micro LED light-emitting device to form a quantum dot coating; then, evenly dividing the quantum dot coating into a red graphene quantum dot coating area, a green graphene quantum dot coating area, and a blue graphene quantum dot coating area; Subsequently, the red graphene quantum dot coating area is first brought into contact with the N element dopant, and then the green graphene quantum dot coating area to be doped is brought into contact with the N element dopant, while the blue graphene quantum dot coating area is not brought into contact with the N element dopant. Through such a process, the invention can use a quantum dot coating to realize the conversion of red, green and blue colors. This effectively reduces the difficulty of the RGB full-color process, avoids the problem of high-cost repair, and improves the display. Uniformity provides an innovative solution for the preparation of full-color Micro LED devices.
With the continuous breakthroughs and publicity of Micro LED patent technology by companies such as Zhaochi Semiconductor, Gaoke Huaye, and Gaoke Video, it is expected to lead Micro LED.