BOE Huacan's gallium nitride technology progress reveals, leading new changes in the semiconductor i

On March 6, 2025, Semiconductor Online ushered in a technological feast. Ma Huan, director of gallium nitride R &D at BOE Huacan, shared the cutting-edge progress of gallium nitride devices at the sincere invitation of Semiconductor Online. This sharing instantly aroused enthusiastic attention and extensive discussion in the industry. At present, the global semiconductor field is increasingly eager for high-performance and high-efficiency devices. Gallium nitride (GaN) technology has risen and gradually become the focus of the new generation of electronic devices. Its excellent performance characteristics show unimaginable potential in terms of power conversion and radio frequency applications, injecting new vitality into the development of the industry.

Exploring gallium nitride technology

Gallium nitride, as an emerging wide-gap semiconductor material, has attracted much attention in recent years. In addition to emitting light and heating in optoelectronic applications, its application range in power management and radio frequency communications is constantly expanding due to its high efficiency and high power output characteristics. Gallium nitride has high conductivity and excellent thermal management properties. These outstanding advantages make GaN devices the best choice for the next generation of high-performance power supply solutions. The use of gallium nitride technology can not only greatly improve system efficiency, but also significantly reduce energy consumption. It undoubtedly provides a strong boost to the development of green energy and becomes a key force in promoting the sustainable development of the industry.

BOE Huacan: Strong responsibility in the field of gallium nitride

With its profound technical heritage accumulated over the years and continuous innovative practices, BOE Huacan has successfully entered the core camp in the gallium nitride field and become an important promoter of industry development. Since its establishment in 2005, during this 20-year period, BOE Huacan has always unswervingly focused on the research and development and mass production of gallium nitride materials. With painstaking efforts, it has now obtained the world's leading nitride patent layout, demonstrating its strong technical strength. The company has always adhered to the path of independent research and development, closely focused on market demand, and is committed to creating more efficient and reliable electronic solutions tailored to our customers. As an IDM company that integrates multiple aspects such as design and manufacturing, BOE Huacan's business layout covers many key areas such as device design, substrate, epitaxy, and chip technology. This integrated advantage enables it to achieve efficient collaboration in the design and manufacturing process, which not only responds quickly to and meets market demand, but also has solid sustainable development capabilities, laying a solid foundation for the company's long-term development.

BOE Huacan's Innovation Journey of GaN

BOE Huacan continues to make efforts in the field of gallium nitride power semiconductor technology, continues to pioneer and innovate, and has overcome obstacles all the way, achieving a series of remarkable results.

1. Breakthroughs in epitaxial technology: BOE Huacan has achieved a major leap in device lateral BV from 1400V to 2000V + relying on its independently developed sapphire GaN epitaxial structure. This improvement greatly enhances the reliability margin of the device and provides a more solid guarantee for the stable operation of the product. At the same time, this achievement also provides sufficient performance support at the epitaxial level for the research and development of higher voltage devices such as 900V and 1200V, laying a solid foundation for subsequent product upgrades and iterations.
2. Cost control and process optimization: In terms of materials and process manufacturing, BOE Huacan has made substantial progress and successfully promoted the gradual reduction of costs. This achievement is of great significance and lays a solid foundation for providing customers with more cost-effective products, giving the company's products a more price advantage in market competition, and better meeting customers 'needs for high-quality and low-cost products.
3. Device yield improvement: The company successfully overcame technical problems and achieved a significant improvement in the 240mohm yield of GaN power devices independently developed by BOE Huacan throughout the process, and the improvement effect is stable and repeatable. This means that during the product production process, the company can export products with a higher yield, effectively reduce production costs, improve production efficiency, and further enhance the market competitiveness of products.
4. Upgrade of testing capabilities: In order to fully meet the market's testing needs for GaN power devices, BOE Huacan has carefully built a dynamic testing and reliability laboratory. The laboratory is equipped with advanced test equipment and a professional technical team, which can quickly respond to various complex test requirements and provide in-depth and efficient mechanism analysis support for test results. This measure not only ensures the reliability of product quality, but also provides strong data support for the company's technical research and development and product optimization.
5. Clear product planning: The company clearly demonstrated the product technology roadmap for devices from Gen0.5 to Gen2. This roadmap is like a detailed operational blueprint that clarifies the company's future product research and development direction and technology upgrade path. It will effectively support the smooth achievement of the company's five-year strategic plan and help the company seize the opportunity in the fierce market competition. Achieve steady development.
6. Improve the quality system: BOE Huacan has gradually built a full-process quality assurance system from product research and development to mass production and delivery by strengthening R & D quality and process quality control. At the same time, we will continue to promote the construction and optimization of inspection processes, test standards and hardware platforms to ensure that every product delivered to customers has excellent quality. This series of measures not only enhances the company's brand image, but also provides customers with reliable product protection and enhances customers 'trust and loyalty to the company.

In the current competitive market environment, BOE Huacan will always adhere to the core concepts of innovation-oriented and win-win cooperation, continue to increase investment in research and development in the field of gallium nitride technology, and fully promote technological breakthroughs and application expansion. Through unremitting technological innovation and proactive market development, the company is determined to occupy an important position in the future power semiconductor market and make great strides towards the ambitious goal of becoming a global leader in compound semiconductor innovation. Looking to the future, BOE Huacan will continue to be committed to optimizing the performance of power device products, continuously improving user experience, providing more trustworthy and valuable gallium nitride solutions to customers around the world, and contributing more BOE Huacan to the development of the industry. strength.