Micro LED new breakthrough! Jingneng Optoelectronics's first 12-inch silicon substrate InGa-based tr

Recently, Jingneng Optoelectronics released the epitaxial technology results of a full series of three-primary color Micro LEDs based on InGaN on a 12-inch silicon substrate.

Jingneng Optoelectronics displays the rapid inspection EL lighting effect of 12-inch silicon substrate red, green and blue InGa-based LED epitaxial wafers

It is reported that Jingneng Optoelectronics was founded in 2006. It is a full-industry chain IDM semiconductor optoelectronic product provider with core technology of underlying chips. It provides high-quality LED (epitaxial, chip, package and module) light sources and sensing sensors to customers around the world. Device products and solutions.

Based on nearly 20 years of GaN-based LED technology and industrialization accumulation on silicon substrates, Jingneng Optoelectronics launched 8-inch silicon substrate InGaN red light epitaxy technology as early as 2020, and is still continuing to develop to improve InGaN red light efficiency.

In September 2021, Jingneng Optoelectronics successfully prepared InGaN three-color Micro LED arrays on silicon substrates with pixel dot spacing of 25 microns and pixel density of 1000PPI. At present, the important technical indicator of pixel spacing has been reduced to 8 microns.

In 2022, Jingneng Optoelectronics will break through the key technology of InGaN-based tricolor Micro LED epitaxy on 8-inch silicon substrates, and successfully prepared Micro LED tricolor arrays with 5 micron pitch, actively deploying emerging markets.

Jingneng Optoelectronics said that driven by cost and yield, upgrading to large size wafers has become a definite development trend in Micro LED industrialization, which is also in line with the company's continuous innovation pursuit in the field of GaN-based LED technology on silicon substrates. Large size wafers can not only greatly improve the utilization rate of Micro LED epitaxial wafers and CMOS backplates, but also facilitate compatibility with mature silicon IC equipment and processes, improve Micro LED process efficiency, reduce costs, and accelerate the commercial process of Micro LED technology.

According to Dr. Fu Yi, vice president of Jingneng Optoelectronics, epitaxial growth of Micro LEDs on large size silicon substrates has brought more stringent challenges to the development of key technologies such as GaN crystal quality, epitaxial warpage, external quantum efficiency, optoelectronic consistency and InGaN red MQW.

The release of the industrial epitaxial technology of 12-inch silicon substrate InGaN-based red, green and blue Micro LEDs shows that Jingneng Optoelectronics has initially overcome the above key technical challenges by using its continuous innovation and iteration capabilities of silicon substrate GaN-based LED technology., paving the way for the optimization and improvement of subsequent technologies and processes.

Jingneng Optoelectronics further stated that Apple's launch of Vision Pro this year will bring higher popularity to the global AR/VR industry, but Vision Pro will not be the end. People are increasingly expecting portable and efficient wearable display technology. Eager, this will greatly promote the innovation and application of various micro-display technologies.

The Micro LED process route based on large size silicon substrates has great potential in terms of cost, yield and light efficiency, and is expected to become the mainstream industrialization route for micron Micro LEDs. Breakthroughs in epitaxial technology of tricolor Micro LED on 12-inch silicon substrates will effectively promote the development of Micro LED display technology in this direction.