Major breakthroughs in MicroLED bandwidth and efficiency

On January 27, the Atomic Energy Information Laboratory recently announced that it will attend the 2024 Optoelectronics Western Expo, which opens on January 31, and publish two papers on the progress of its microled technology, introducing how to manufacture LED matrices with higher data rate density, and how to reduce efficiency losses from small size LEDs.

In Parallel Communication with InGaN /GaN Micro LEDs Using CMOS Compatible Methods, AEL will describe how LEDs can be fabricated directly on 200 mm silicon substrates, paving the way for the production of LED matrices on the order of a few microns that are independently controlled by dedicated CMOS circuits.

InGaN /GaN micro LEDs are strong candidates for high data rate optical communications because of their ruggedness, large-scale availability, and ability to achieve GHz bandwidth.

The LED array uses InGaN /GaN micro light emitting diodes, which can achieve large-scale parallel transmission, thereby achieving high data rate density.

The Atomic Energy Information Laboratory has also developed a patented process for integrating GaN LED matrices onto CMOS ASICs, by directly adhering micro LEDs to a 200-mm silicon wafer and using gallium nitride-based devices as emitters and fast photodetectors., optimizing the integration of micro LEDs.

Another paper is titled "Effect of InGaN quantum well thickness on current-carrying diffusion length on sapphire, free-standing GaN and silicon."

The agency said: We have experimentally proved that the diffusion length can be reduced by reducing the thickness of InGaN quantum wells. In addition, we also demonstrated power-related and unexpected diffusion behavior observed in large quantum wells, which may help us understand the physics of emitters. quot;